Multilayer wiring structure of semiconductor device, method of producing said multilayer wiring structure and semiconductor device to be used for reliability evaluation

ABSTRACT

A multilayer wiring structure of a semiconductor device having a stacked structure is arranged to restrain reliability degradation due to stress applied to the region of wiring between opposite upper and lower plugs. The rate of overlap of contact surface between upper plug and wiring on contact surface between lower plug and wiring, is small to the extent that no void is generated. The multilayer wiring structure is produced such that no grain boundary is contained in the region of wiring between upper and lower plugs. The difference in thermal expansion coefficient between the material of wiring and the material of upper and lower plugs, is small to the extent that no void is generated.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a Divisional of U.S. application Ser. No.12/631,592, filed on Dec. 4, 2009 now U.S. Pat. No. 7,911,060, which isa Divisional of U.S. application Ser. No. 12/236,914, filed on Sep. 24,2008, now U.S. Pat. No. 7,642,654, which is a Divisional of U.S.application Ser. No. 11/582,982, filed Oct. 19, 2006, now U.S. Pat. No.7,443,031, which is a Continuation of Ser. No. 10/837,596, filed May 4,2004, now U.S. Pat. No. 7,148,572, which is a Divisional of U.S.application Ser. No. 10/443,826, filed May 23, 2003, now U.S. Pat. No.6,815,338, which is a Divisional of U.S. application Ser. No.09/760,640, filed Jan. 17, 2001, now U.S. Pat. No. 6,580,176 which isDivisional of U.S. application Ser. No. 09/113,370, filed Jul. 1, 1998,now U.S. Pat. No. 6,197,685, which claims priority of Japanese PatentApplication Nos. 9-186140, filed Jul. 11, 1997 and 9-348965, Filed Dec.18, 1997, the entire contents of each of which are herewith incorporatedby reference.

BACKGROUND OF THE INVENTION

Recent miniaturization of the wirings in ULSIs disadvantageouslycontributes to a reduction in reliability of the wirings. In particular,due to a development in multilamination of wirings, there isincreasingly used a so-called stacked structure in which upper and lowerplugs made of a high-melting-point metal such as W (tungsten), TiN orthe like and its compound, are respectively disposed, as opposite toeach other, on and under a wiring. In such a stacked structure, thatportion of the wiring held by and between the plugs is disadvantageouslyweak in reliability.

To enhance the wiring reliability, a first method of prior art is forexample arranged to prevent the stress migration that stress from aprotective layer disconnects wirings. More specifically, a wiring layerlarge in grain size is formed in a region in which a major portion ofthe electric current flows, and a wiring layer small in grain size isformed at a position to which stress is relatively readily applied, suchas a surrounding of the wiring (in particular, lateral wall or upper endportion) (See Japanese Patent Laid-Open Publication No. 5-275426).

According to a second method of prior art, there is proposed a stackedstructure in which the width of each wiring is smaller than the width ofthe lower-layer-side connection hole and in which the bottom of theupper-layer-side connection hole extends into the lower-layer-sideconnection hole such that the wiring is reinforced as if entirelysurrounded (See Japanese Patent Laid-Open Publication No. 8-167609).

According to the first method of prior art, however, the wiring isformed by forming a wiring layer small in grain size at a lateral wallof a wiring layer large in grain size. This excessively increases thewidth of the wiring and is therefore not suitable for miniaturization.

According to the second method of prior art, the width of each of theupper- and lower-layer-side connection holes is inevitably larger thanthe width of the wiring. This is neither suitable for miniaturization.Further, no consideration has been taken for stress from a high-meltingpoint metal or its compound which surrounds the wiring.

SUMMARY OF THE INVENTION

In a multilayer wiring structure of a semiconductor device having astacked structure, the present invention is proposed with the object ofrestraining a wiring from being lowered in reliability, particularly,due to stress applied to that portion of the wiring held by and betweenupper- and lower-layer-side plugs.

Further, the present invention provides a semiconductor device which isto be used for reliability evaluation and which has a test patterncapable of detecting, with high sensitivity, a connection failure in astacked structure.

More specifically, a multilayer wiring structure of a semiconductordevice according to the present invention comprises: a substrate; two ormore wiring layers formed on the substrate; an upper plug forelectrically connecting a wiring formed at one of the wiring layers tothe upper wiring; and a lower plug opposite to the upper plug with thewiring interposed, for electrically connecting the wiring to the lowerwiring layer or to the substrate, wherein when viewed in the directionof vertical line of the substrate surface, the distance between centerof contact surface between the upper plug and the wiring, and center ofcontact surface between the lower plug and the wiring is about ⅔ or moreof the diameter of each of the upper and lower plugs.

Further, a multilayer wiring structure of a semiconductor deviceaccording to the present invention comprises; a substrate; two or morewiring layers formed on the substrate; an upper plug for electricallyconnecting a wiring formed at one of the wiring layers to the upperwiring layer; and a lower plug opposite to the upper plug with thewiring interposed, for electrically connecting the wiring to the lowerwiring layer or to the substrate, wherein the upper plug is insertedfrom the top surface of the one wiring layer to a depth of about ⅓ ormore of the thickness thereof, the one wiring layer has a partprojecting into lower side and being in contact with said lower plug,and the height of the projecting part from the undersurface of the onewiring layer is about ⅓ or less of the diameter of each of the lowerplugs.

Further, a multilayer wiring structure of a semiconductor deviceaccording to the present invention comprises: a substrate; two or morewiring layers formed on the substrate; an upper plug for electricallyconnecting a wiring formed at one of the wiring layers to the upperwiring layer; and a lower plug opposite to the upper plug with thewiring interposed, for electrically connecting the wiring to the lowerwiring layer or to the substrate, wherein the wiring has no grainboundary in the region between the opposite upper and lower plugs.

Further, a multilayer wiring structure of a semiconductor deviceaccording to the present invention comprises; a substrate; two or morewiring layers formed on the substrate; an upper plug for electricallyconnecting a wiring formed at one of the wiring layers to the upperwiring layer; and a lower plug opposite to the upper plug with thewiring interposed, for electrically connecting the wiring to the lowerwiring layer or to the substrate, wherein the difference in thermalexpansion coefficient between the material of the wiring and thematerial of at least one of the upper and lower plugs is so small thatno void may be generated in the region of the wiring between theopposite upper and lower plugs.

A multilayer wiring structure of a semiconductor device according to thepresent invention comprises; a substrate; two or more wiring layersformed on the substrate; an upper plug for electrically connecting awiring formed at one of the wiring layers to the upper wiring layer; anda lower plug opposite to the upper plug with the wiring interposed, forelectrically connecting the wiring to the lower wiring layer or to thesubstrate, wherein the one wiring layer has a layer of ahigh-melting-point metal or an alloy of high-melting-point metal on thetop surface thereof, and the wiring is in contact with the upper plugthrough the layer of a high-melting-point metal or an alloy ofhigh-melting-point metal.

Further, a multilayer wiring structure of a semiconductor deviceaccording to the present invention comprises; a substrate; two or morewiring layers formed on the substrate; an upper plug for electricallyconnecting a wiring formed at one of the wiring layers to the upperwiring layer; and a lower plug opposite to the upper plug with thewiring interposed, for electrically connecting the wiring to the lowerwiring layer or to the substrate, wherein the one wiring layer has alayer of a high-melting-point metal on the undersurface thereof, andsaid layer of a high-melting-point metal has a thickness of not greaterthan 10 nm or not less than 80 nm.

Further, a method of producing a multilayer wiring structure of asemiconductor device according to the present invention comprises; astep of forming a first opening in a first insulating layer formed on asubstrate and forming a lower plug in the first opening; a step offorming a wiring on the first insulating layer and the lower plug; and astep of forming a second insulating layer on the wiring, and forming, inthe second insulating layer and the wiring, a second opening opposite tothe first opening and with a depth of about ⅓ or more of the thicknessof the wiring, and forming an upper plug in the second opening; at thelower plug forming step, a CMP or etching-back method being used suchthat the distance between top surface of the lower plug and top surfaceof the first insulating layer, is about ⅓ or less of the diameter ofeach of the upper and lower plugs.

Further, a method of producing a multilayer wiring structure of asemiconductor device according to the present invention comprises: astep of forming a first opening in a first insulating layer formed on asubstrate and forming a lower plug in the first opening; a step offorming, on the first insulating layer and the lower plug, a wiringhaving a layer of aluminium or aluminium-alloy; and a step of forming asecond insulating layer on the wiring, and forming, in the secondinsulating layer, a second opening opposite to the first opening, andforming an upper plug in the second opening; at the wiring forming step,the aluminium or aluminium-alloy layer of the wiring being formed, bysputtering, at a substrate temperature of about 200° C. or more suchthat the region of the wiring between the opposite upper and lowerplugs, has no grain boundary.

Further a method of producing a multilayer wiring structure of asemiconductor device according to the present invention comprises; astep of forming a first opening in a first insulating layer formed on asubstrate; a step of forming a lower plug in the first opening andforming a wiring on the first insulating layer; and a step of forming asecond insulating layer on the wiring, and forming, in the secondinsulating layer, a second opening opposite to the first opening, andforming an upper plug in the second opening; at the lower plug andwiring forming step, a CVD method or a CVD and sputtering method beingused such that aluminium or an aluminium alloy is deposited in the firstopening and on the first insulating layer, thus forming the lower plugand the wiring.

Further, a semiconductor device according to the present inventioncomprises: a substrate; and three or more wiring layers formed on thesubstrate; a test pattern for reliability evaluation formed at thewiring layers; the test pattern comprising: an electrically isolatedwiring formed at other wiring layer than the highest and lowest layers;an upper plug in contact with top surface of the wiring for electricallyconnecting the wiring to the upper wiring layer; and a lower plug incontact with the undersurface of the wiring for, electrically connectingthe wiring to the lower wiring layer, wherein the upper and lower plugsare opposite to each other with the wiring interposed, and when viewedin the direction of vertical line of the substrate, contact surfacebetween the wiring and the upper plug overlaps with, at least partially,contact surface between the wiring and the lower plug.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1( a) is a section view of a sample for electrically detecting theeffect of stacked structure in a multilayer wiring structure of asemiconductor device and FIG. 1( b) is a perspective view of a part ofthe sample in FIG. 1( a);

FIG. 2 is a characteristic view illustrating the problem to be solved bythe present invention, in which FIG. 2( a) is a graph illustrating therelationship between storage period at high temperature and rate offailure of samples showing in FIG. 1 and FIG. 2( b) is a graphillustrating the relationship between wiring width and resistancevariation of the samples shown in FIG. 1 after storage at hightemperature;

FIG. 3 is a characteristic view illustrating the problem to be solved bythe present invention, showing the relationship between storagetemperature and accumulated failure attainment period of the samplesshown in FIG. 1;

FIG. 4 is a characteristic view illustrating the problem to be solved bythe present invention, showing the relationship between wiring structureand rate of acceptable product;

FIG. 5 is a section view illustrating the result of observation bytransmission electron microscope of a wiring structure as shown in FIG.1 that becomes failure after storage at high temperature;

FIGS. 6( a) and 6(b) are views illustrating the result of simulation,using a finite-element method, of internal stress generated attemperature change in the wiring structure in FIG. 5;

FIG. 7 is a graph illustrating a first embodiment of the presentinvention and shows the relationship between rate of acceptable productand overlap rate between upper and lower plugs;

FIG. 8( a) is a section view of a multilayer wiring structure of asemiconductor device according to a second embodiment of the presentinvention, and FIG. 8( b) is a graph illustrating the relationshipbetween recess d1 and rate of failure;

FIG. 9( a) to FIG. 9( f) are section views illustrating a method ofproducing a multilayer wiring structure of a semiconductor deviceaccording to a third embodiment of the present invention;

FIG. 10 is a view illustrating a test according to the third embodimentof the present invention; in which FIG. 10( a) is a view illustratingthe sectional structure of a sample used in the test and FIG. 10( b) isa graph illustrating the relationship between deposition temperature atsputtering and depth d2 of wiring recess on lower plug;

FIG. 11( a) to FIG. 11( e) are section views illustrating a method ofproducing a multilayer wiring structure of a semiconductor deviceaccording to a fourth embodiment of the present invention;

FIG. 12 is a section view of a multilayer wiring structure of asemiconductor device according to a fifth embodiment of the presentinvention;

FIG. 13 is a graph illustrating a sixth embodiment of the presentinvention and shows the relationship between rate of failure andthickness of Ti layer serving as the lowest layer of the wiring;

FIG. 14 is a section view of a semiconductor device according to aseventh embodiment of the present invention;

FIG. 15 is a graph illustrating the dependency of stress migrationfailure upon the wiring area in the semiconductor device according tothe seventh embodiment of the present invention;

FIG. 16 is a section view of a semiconductor device according to aneighth embodiment of the present invention;

FIG. 17 is a section view of a semiconductor device according to a ninthembodiment of the present invention;

FIG. 18 is a section view of a semiconductor device according to a tenthembodiment of the present invention;

FIG. 19 is a graph illustrating the dependency of stress migrationfailure upon the distance between adjacent pairs of false plugs in thesemiconductor device according to the tenth embodiment of the presentinvention; and

FIG. 20 is a plan view of a modification of the semiconductor deviceaccording to the tenth embodiment of the present invention.

DETAILED DESCRIPTION OF THE INVENTION

FIG. 1 illustrates the structure of a sample to be used for electricallydetecting the effect of the stacked structure of a multilayer wiringstructure of a semiconductor device.

FIG. 1( a) is a section view of this sample. Shown in FIG. 1( a) are asemiconductor substrate 1, a first insulating layer 2, contact embeddedmetals (lower plugs) 3 made of W (tungsten) formed on a Ti/TiNtwo-lamination film, a first wiring 4 formed of a Cu-containing Al alloyformed above a Ti/TiN two-lamination film and above which a TiN film isformed, a second insulating layer 5, through-hole embedded metals (upperplugs) 6 each having a metal composition similar to contact embeddedmetal 3, second wirings 7 each having a metal composition similar tofirst wiring 4, a silicon nitride layer 8 serving as a protective layer,and a polyimide layer 9 as an LSI chip coat.

FIG. 1( b) is a perspective view of first wiring 4, and the contactembedded metal 3 and the through-hole embedded metal 6 respectivelyconnected to the underside and top of the first wiring 4. The firstwiring 4 has a wiring length of 31 mm and has 1,000 contact holes and1,000 through-holes. Wiring widths of first wiring 4 are in the rangefrom 0.4 to 1.0 μm and are respectively equal to the diameters of thecorresponding contact holes and through-holes.

In FIG. 1( b), the characteristics of voltage and current are measuredbetween pad portions 4A, 4B disposed at both ends of each first wiring4. The measurement of characteristics of voltage and current refers tothe measurement of resistance value of first wiring 4 provided at theunderside and top thereof with contact embedded metal 3 and through-holeembedded metal 6, respectively. For semiconductor substrate 1electrically connected to contact embedded metals 3 is made of Si and ishigher in resistance value than first wiring 4 made of metal. And secondwirings 7 electrically connected to through-hole embedded metal 6 areelectrically independently arranged in its wiring layer.

FIG. 2 illustrates the result of measurement on the characteristics ofvoltage and current between pad portions 4A, 4B, i.e., the resistancevariations of first wirings 4, of samples shown in FIG. 1 before andafter storage at around 250° C. FIG. 2( a) is a graph illustrating therelationship between storage period at about 250° C., and rate of wiringfailure. In FIG. 2( a), ordinate axis represents rate of failure (%)while abscissa axis represents storage period (hrs). Here, rate offailure is obtained on the basis that wiring of which resistancevariation exceeded 20%, is judged as failure. FIG. 2( b) is a graphillustrating the relationship between wiring width and resistancevariation of samples after stored at about 250° C. for 1,000 hours. InFIG. 2( b), ordinate axis represents resistance variation (%) whileabscissa axis represents wiring width (μm).

FIG. 3 is a graph illustrating the relationship, in the samples shown inFIG. 1, between storing temperature and accumulated failure attainmentperiod during which accumulated failure rate reached 0.1%. Likewise inFIG. 2, wiring of which resistance variation exceeded 20% is judged asfailure. In FIG. 3, ordinate axis represents accumulated failureattainment period (hrs) while abscissa axis represents 1000/storingtemperature (1/K). FIG. 3 shows that the accumulated failure attainmentperiod is minimized in the vicinity of 250° C. It is understood thatsuch a phenomenon occurs from an Al alloy migration failure due tostress, which is a kind of a so-called stress migration failure.

FIG. 4 is a view illustrating the relationship between wiring structureand rate of acceptable product. FIG. 4 shows the rate of acceptableproduct for three types of wiring structures, i.e., wiring structure Ahaving an upper plug and a lower plug opposite to each other, wiringstructure B having only a lower plug, and wiring structure C having onlyan upper plug, after storage at 200° C. for 1,000 hours. Here, rate ofacceptable product is obtained on the basis that wiring of whichresistance variation exceeded 20% is judged as failure. It is understoodfrom FIG. 4 that the problem to be solved by the present invention ischaracteristic in the wiring structure having an upper plug and a lowerplug opposite to each other.

FIG. 5 is a section view illustrating the result of observation bytransmission electron microscope of a wiring structure having an upperplug and a lower plug opposite to each other, and of which resistancevariation exceeded 20% after stored at 200° C. for 1000 hours. FIG. 5also shows the result of measurement on microstructure of Al alloy offirst wiring 4, using X-ray diffraction.

As shown in FIG. 5, a void 40 was observed in the portion of firstwiring 4 between contact-hole embedded metal 3 serving as an upper plugand through-hole embedded metal 6 serving as a lower plug. The surfaceorientation of Al alloy of wiring portions 41, 42 between firstinsulating layer 2 and second insulating layer 5, was (111), while thesurface orientation of Al alloy of wiring portions 43, 44 betweencontact embedded metals 3 and through-hole embedded metals 6, was (311)or (022). A grain boundary 45 exists in a region between contact holeembedded metal 3 and through-hole embedded metal 6. Thus, the size ofgrains in wiring portions 43, 44 is smaller than in wiring portions 41,42.

FIG. 6 is a view illustrating the result of simulation, using afinite-element method, of internal stress generated in a right-halfregion X of the region between contact hole embedded metal 3 andthrough-hole embedded metal 6 in the wiring structure in FIG. 5 when thetemperature was changed from 400° C. to 25° C.

The stress applied to first wiring 4 at its flat portions was 200˜300MPa. On the contrary, the stress applied to the portion of first wiring4 into which through-hole embedded metal 6 enters was much higher. Morespecifically, the stress was 457 MPa when the top of contact embeddedmetal 3 is lower the top of first insulating layer 2 (FIG. 6( a)), andthe stress was 449 MPa when the top of contact embedded metal 3 islocated at the same level of the top of first insulating layer 2 (FIG.6( b)).

From these tests and simulation, the following factors would beconsidered to contribute to stress migration failure in multilayerwiring structure of a semiconductor device. When multilayer wiringstructure is stored at high temperature, stress migration occurs, in thewiring portion between the opposite upper and lower plugs, particularlyin which the upper plug enters into the wiring and strong stress isapplied, because grain size is small and surface orientation is weak instress such as (311) or (022) in the wiring portion.

The following description will discuss embodiments of the presentinvention with reference to the attached drawings.

Embodiment 1

A first embodiment of the present invention is arranged such that, in awiring structure having an upper plug and a lower plug opposite to eachother, the overlap rate between upper and lower plugs when viewed in thedirection of vertical line of the substrate surface, is reduced to theextent that no voids are generated.

FIG. 7 is a view illustrating the relationship, in wiring structurehaving an upper plug and a lower plug opposite to each other, betweenrate of acceptable product and overlap rate between the upper and lowerplugs. In this embodiment, each of upper and lower plugs is 0.6 μm indiameter, and overlap rates are 0.6 μm, 0.3 μm, 0.2 μm (distancesbetween center of contact surface between upper plug and wiring, andcenter of contact surface between lower plug and wiring are 0 μm, 0.3μm, 0.4 μm). The rate of acceptable product is obtained on the basisthat wiring of which resistance variation exceeded 20%, is judged asfailure after storage at 200° C. for 1,000 hours.

As shown in FIG. 7, acceptable product is 100% when overlap rate is 0.2μm. This shows that stress migration failure will not occur when overlaprate is not greater than 0.2 μm. Accordingly, by setting the distancebetween center of contact surface between upper plug and wiring, andcenter of contact surface between lower plug and wiring, to 0.4 μm ormore, i.e., to ⅔ or more of the diameter of each of the upper and lowerplugs, a good multilayer wiring structure in which a stress migrationfailure hardly occurs can be formed.

Embodiment 2

FIG. 8( a) is a section view of a multilayer wiring structure of asemiconductor device according to a second embodiment of the presentinvention.

The multilayer wiring structure of a semiconductor device as shown inFIG. 8( a) is produced in the following manner. First, a contact openingas first opening is formed in a first insulating layer 2 on asemiconductor substrate by dry-etching, a Ti/TiN two-lamination film isformed by sputtering or the like, and W is then embedded in the contactopening by a CVD method. Then, W and the Ti/TiN two-lamination film weresubjected to etching-back, and a contact embedded metal 3 is formed as alower plug in the contact opening. Then, a Ti/TiN two-lamination film isformed, and a Cu-containing Al alloy is formed on this two-laminationfilm, and a TiN film is formed on the Al alloy, thus forming a firstwiring 4. A second insulating layer 5 is formed on the first wiring 4.In a through-hole opening as second opening in the second insulatinglayer 5, a through-hole embedded metal 6 having a composition similar tocontact embedded metal 3, is formed in a manner similar to forming thecontact embedded metal 3, the through-hole embedded metal 6 serving asan upper plug. To lower the contact resistance between first wiring 4and through-hole embedded metal 6, through-hole embedded metal 6 isinserted into first wiring 4 to a depth of about ⅓ or more of thethickness of first wiring 4 from the top thereof.

A plurality of samples each of which had the multilayer wiring structureas shown in FIG. 8( a), and which were different in recess d1 bychanging the amount of over-etching at etching-back of W and Ti/TiNtwo-lamination film were produced. The recesses d1 is the height ofprojecting part 4H that projects into lower side and is in contact withcontact embedded metal 3, from the under surface of first wiring 4. FIG.8( b) is a graph illustrating rate of failure for these samples afterstorage at 250° C. for 168 hours. Rate of failure is obtained on thebasis that samples of which resistance variation exceeded 20%, is judgedas failure. In FIG. 8( b), ordinate axis represents rate of failure (%)while abscissa axis represents recess d1 (μm). Each of upper and lowerplugs is 0.6-μm in diameter.

As apparent from FIG. 8( b), when recess d1 is not greater than 0.2 μm,rate of failure is 0% and stress migration failure has not occurred.Observation by a scanning electron microscope of samples in sectionafter measurement of rate of failure shows the following. In each sampleof which the recess d1 is larger than 0.2 μm, a grain boundary is almostalways present in the region of first wiring 4 above contact embeddedmetal 3. On the other hand, in each sample of which the recess d1 is notgreater than 0.2 μm, a grain boundary is hardly present in the region offirst wiring 4 above contact embedded metal 3 and the grain size in thisregion is substantially equal to in other region.

From the foregoing, the recess d1 of 0.2 μm, would be the border line ofwhether or not a stress migration failure occurs. Accordingly, whenrecess d1 is brought to 0.2 μm or less, i.e., to about ⅓ or less of thediameter of each of upper and lower plugs, a good multilayer wiringstructure in which a stress migration failure hardly occurs can beformed.

In the foregoing, the description has been made of the case where anetching-back method using dry-etching is employed for forming contactembedded metal 3 and through-hole embedded metal 6. However, when theetching-back method is used, a residue readily remains, often resultingin over-etching. Thus, the recess d1 tends to be increased. On the otherhand, when forming the contact embedded metal 3 and the through-holeembedded metal 6 with the use of a CMP (Chemical Mechanical Polishing)method, the recess d1 can be controlled in size with high precision.Therefore, there can securely be formed a multilayer wiring structure ofa semiconductor device according to the second embodiment.

Embodiment 3

FIG. 9( a) to FIG. 9( f) are section views of the multilayer wiringstructure of a semiconductor device at the respective steps of aproduction method according to a third embodiment of the presentinvention. As shown in FIG. 9( a), a contact opening 2 a is formed in afirst insulating layer 2 on a semiconductor substrate 1. As shown inFIG. 9( b), a W layer 3 b is then formed on a Ti/TiN two-laminationlayer 3 a. Then, as shown in FIG. 9( c), the Ti/TiN two-lamination layer3 a and the W layer 3 b on the first insulating layer 2, are etched suchthat the Ti/TiN two-lamination layer 3 a and the W layer 3 b remain onlyin the contact opening 2 a, thus forming a contact embedded metal 3.Formed on the contact embedded metal 3 is a Ti/TiN two-lamination layer4 a, on which formed is a Cu-containing Al alloy 4 b, on which a TiNlayer 4 c is formed. Thus, a first wiring 4 is formed.

The Al alloy 4 b is formed by sputtering at a deposition temperature ofnot less than 200° C. By depositing Al alloy 4 b at temperature of notless than 200° C., the crystal of Al alloy 4 b grows during deposition.Accordingly, Al alloy 4 b is formed to fill the recess around contactopening 2 a. Thus, the portion of Al alloy 4 b on contact opening 2 abecomes thicker than other portion of Al alloy 4 b.

As shown in FIG. 9( d), a second insulating layer 5 is formed on thefirst wiring 4. A through-hole opening 5 a is formed in the secondinsulating layer 5. Then, a W layer 6 b is formed on a Ti/TiNtwo-lamination layer 6 a. The through-hole opening 5 a enters into thefirst wiring 4. However, provision is made such that the depth of thatportion of the through-hole opening 5 a entering into the first wiring4, is equal to or smaller than the difference in level between the topof the contact embedded metal 3 and the top of that portion of the firstinsulating layer 2 around the contact opening 2 a. By forming thethrough-hole opening 5 a in this manner, the depth of that portion ofthe first wiring 4 on the contact embedded metal 3 is equal to orgreater than the depth of the other portion of the first wiring 4.

As shown in FIG. 9( e), the Ti/TiN two-lamination layer 6 a and the Wlayer 6 b on the second insulating layer 5 are etched such that theTi/TiN two-lamination layer 6 a and the W layer 6 b remain only in thethrough-hole opening 5 a, thus forming a through-hole embedded metal 6.Formed on the through-hole embedded metal 6 is a Ti/TiN two-laminationlayer 7 a, on which formed is a Cu-containing Al alloy 7 b, on which aTiN layer 7 c is then formed. Thus, a second wiring 7 is formed. Asshown in FIG. 9( f), a silicon nitride layer 8 is then formed as aprotective layer by a plasma CVD method.

In the multilayer wiring structure of a semiconductor device thusproduced, that portion of the Al alloy 4 b of the first wiring 4 on thecontact embedded metal 3 has a thickness equal to or greater than thatof other portion of the Al alloy 4 b. Likewise in the second embodiment,a grain boundary hardly existed in that portion of the first wiring 4 onthe contact embedded metal 3, i.e., that portion of the Al alloy 4 bheld by and between the upper- and lower-layer-side plugs opposite toeach other. Further, the sizes of the crystal grains in this portionwere substantially equal to those in other portion. Thus, likewise inthe second embodiment, the structure according to the third embodimentexhibited no increase in wiring resistance due to stress migrationfailure after the structure had been stored at high temperature.

FIGS. 10( a) and 10(b) are views illustrating the relationship betweendeposition temperature at sputtering and the depth of the portion offirst wiring 4 between upper and lower plugs opposite to each other.FIG. 10( a) shows the sectional structure of a sample used in the test.A contact opening having a diameter of 0.6 μm was formed in firstinsulating layer 2 having a thickness of 0.7 μm on semiconductorsubstrate 1, and in this contact opening, contact embedded metal 3 isformed of W on the Ti/TiN two-lamination film. The distance between theunderside of first wiring 4 and the top of contact embedded metal 3 is0.2 μm. Formed on contact embedded metal 3 were a Ti film having athickness of 50 nm, a Cu-containing Al alloy having a thickness of 600nm and a TiN film having a thickness of 30 nm. For the test, the sampleswere produced at a variety of Al alloy deposition temperatures, and thedepth d2 of concave portion of first wiring 4 on contact embedded metal3, was measured through an SEM observation in section.

FIG. 10( b) shows the experiment result. To make the thickness ofportion of Al alloy of first wiring 4 on contact opening, equal to orgreater than that of other portion of Al alloy, it is required thatdepth d2 is not greater than 0.2 μm. From FIG. 10( b), depth d2 is notgreater than 0.2 μm when Al alloy deposition temperature is not lessthan 200° C. Then, the Al alloy deposition temperature would preferablybe not less than 200° C.

Embodiment 4

FIG. 11( a) to FIG. 11( e) are section views of the multilayer wiringstructure of a semiconductor device at the respective steps of aproduction method according to a fourth embodiment of the presentinvention. As shown in FIG. 11( a), a contact opening 2 a as firstopening was formed in a first insulating layer 2 on a semiconductorsubstrate 1. As shown in FIG. 11( b), a Ti film 4 d was formed on thefirst insulating layer 2. Using a CVD method at deposition temperatureof 260° C.; with dimethyl aluminium hydride used as material gas, analuminium film in a thickness of 100 nm was deposited on the Ti film 4d. Then, a Cu-containing Al alloy was deposited in a thickness of 500 nmat deposition temperature of 400° C. by sputtering, thus forming a CVDaluminium-Al alloy layer 4 e. Then, a TiN film 4 f was formed. The Tifilm 4 d, the CVD aluminium-Al alloy layer 4 e and the TiN film 4 f wereprocessed in the form of a first wiring 4. Since the aluminium film wasformed using a CVD method, contact opening 2 a was filled withaluminium. Accordingly, the portion of first wiring 4 on contact opening2 a was sufficiently thicker than the other portion of first wiring 4.

As shown in FIG. 11( c), a second insulating layer 5 was formed on thefirst wiring 4, and a through-hole opening 5 a as second opening wasformed in second insulating layer 5. As shown in FIG. 11( d), a CVDaluminium-Al alloy layer 7 e was formed on a Ti film 7 d, and a TiN film7 f was then formed on CVD aluminium-Al alloy layer 7 e. Ti film 7 d,the CVD aluminium-Al alloy layer 7 e and TiN film 7 f were processed inthe form of a second wiring 7. As shown in FIG. 11( e), a siliconnitride layer 8 was formed as a protective layer by a plasma CVD method.

In such a multilayer wiring structure of a semiconductor device, both afirst wiring 4 and a contact embedded metal 3 & a through-hole embeddedmetal 6 are made of an Al alloy. More specifically, a wiring 4 and theupper and lower plugs opposite to each other with this wiringinterposed, are made of the same material. In such a structure, thestress applied to the portion between upper and lower plugs isremarkably smaller than that in a structure in which upper and lowerplugs are made of metal (e.g., W) different from the material of wiring.Accordingly, the structure according to the fourth embodiment exhibitedno increase in wiring resistance due to stress migration failure afterstorage at high temperature.

According to the fourth embodiment, contact opening 2 a and through-holeopening 5 a were filled with an Al alloy by CVD and sputtering. However,such filling can be made using CVD only. Alternatively, an Al alloy maybe formed by sputtering and then heated or pressurized, causing the Alalloy to flow and fill contact opening 2 a and through-hole opening 5 a.

Further, even though upper and lower plugs are different in materialfrom wiring, stress migration failure very seldom occurs as far as thedifference in thermal expansion coefficient between the materials ofwiring and either of upper and lower plugs is small to the extent thatno voids are generated during storage at high temperature.

Embodiment 5

FIG. 12 is a partial enlarged view of a multilayer wiring structure of asemiconductor device according to a fifth embodiment of the presentinvention, illustrating the portion of a first wiring 4 between acontact embedded metal 3 and a through-hole embedded metal 6. In themultilayer wiring structure in FIG. 12, the first wiring 4 comprises aTi film 4 a, a Cu-containing Al alloy 4 b and a TiN film 4 c ashigh-melting-point metal or high-melting-pint metal alloy which areformed in lamination. First wiring 4 is in contact with through-holeembedded metal 6 serving as an upper plug through TiN film 4 c.

The multilayer wiring structure in FIG. 12 is basically produced throughsteps similar to the third embodiment. However, when forming athrough-hole opening 5 a in second insulating layer 5 by dry-etching orthe like, TIN layer 4 c of first wiring 4 is not removed but remains.

According to the multilayer wiring structure of the fifth embodiment,first wiring 4 is in contact with through-hole embedded metal 6 throughTiN film 4 c. This TiN film 4 c lessens the stress from the through-holeembedded metal 6. This restrains the generation of voids, thuspreventing the resistance increase due to stress migration.

Embodiment 6

There were produced samples shown in FIG. 1( a) with Ti film ashigh-melting-point metal film, instead of the lowest Ti/TiNtwo-lamination film of first wiring 4, and rate of failure was measuredfor the samples per thickness of Ti film in the range of 0 to 120 nm.FIG. 13 is a graph illustrating, as the results of measurement, therelationship between the rate of failure and the thickness of Ti film.The rate of failure was obtained on the basis that sample of whichresistance variation exceeded 20% was judged as failure after storage at250° C. for 168 hours.

As understood from FIG. 13, rate of failure is maximized when thethickness of Ti film 4 a is 50 nm, and rate of failure is equal to zerowhen the thickness of Ti film 4 a is 0 nm and not less than 100 nm. Thefollowing would be considered as the reason of the relationship betweenthickness of Ti film and rate of failure as shown in FIG. 13. The stressapplied to first wiring 4 is lessened by Ti film, and this stresslessening effect is increased with an increase in film thickness. On theother hand, when Ti film 4 a is present, Si in the aluminium alloy issucked by Ti film 4 a, causing vacancy to be readily generated inaluminium alloy. It is therefore considered that the results as shown inFIG. 13 were obtained based on the balance between stress lesseningeffect and the susceptibility to vacancy generation in the aluminiumalloy.

Accordingly, by excluding the range from 10 nm to 80 nm as the thicknessof Ti film 4 a, i.e., by setting the thickness of Ti film 4 a to 10 nmor less, or to 80 nm or more, good multilayer wiring structures in whichstress migration failure hardly occurs can be formed.

In each of the first to sixth embodiments, the description has been madeof the two-layer wiring structure, but the present invention can also beachieved in a multilayer wiring structure having three or more layers.

Embodiment 7

FIG. 14 is a section view of a semiconductor device according to aseventh embodiment of the present invention. Shown in FIG. 14 are asilicon substrate 51, a silicon oxide layer 52, a plurality offirst-layer aluminium alloy wirings 53 each having a width of 2 μm and alength of 10 μm serving as lower-layer wirings, a silicon oxide layer 54formed on the first-layer aluminium alloy wirings 53, W plugs 55 servingas lower plugs each having a diameter of 0.5 μm for electricallyconnecting the first-layer aluminium alloy wirings 53 to a plurality ofsecond-layer aluminium alloy wirings 56 serving as 2 μm-square wirings,a silicon oxide layer 57 formed on the second-layer aluminium alloywirings 56, W plugs 58 serving as upper plugs each having a diameter of0.5 μm for electrically connecting the second-layer aluminium alloywirings 56 to a plurality of third-layer aluminium alloy wirings 59serving as upper-layer wirings each having a width of 2 μm and a lengthof 10 μm, and a silicon oxide layer 60 formed on the third-layeraluminium alloy wirings 59. A void 61 is generated and grows in asecond-layer aluminium alloy wiring 56.

As shown in FIG. 14, in the semiconductor device according to theseventh embodiment of the present invention, the first-layer aluminiumalloy wirings 53, the second-layer aluminium alloy wirings 56 and thethird-layer aluminium alloy wirings 59 mutually insulated by the siliconoxide layers 54, 57, are electrically connected in series through the Wplugs 55, 58. A test pattern 71 for measuring a via resistance forreliability evaluation, is formed by these serially connectedfirst-layer aluminium alloy wirings 53, second-layer aluminium alloywirings 56 and third-layer aluminium alloy wirings 59, and the W plugs55, 58.

The resistance value of the test pattern 71 is a sum of the resistancevalues of the aluminium alloy wirings 53, 56, 59 and the resistancevalues of the W plugs 55, 58. When it is now supposed that the sheetresistance of each of the aluminium alloy wirings 53, 56, 59 is equal to100 mΩ/□, that the resistance value of each of the W plugs 55, 58 isequal to 1Ω, and that the number of each of the W plugs 55, 58 is 1,000,the resistance value of the test pattern 71 in a normal mode is equal to2,500 Ω.

According to the seventh embodiment, the second-layer aluminium alloywirings 56 receive stress from the upper and lower W plugs 55, 58 sincethe test pattern 71 has a stacked via structure. When the void 61 growsin the second-layer aluminium alloy wiring 56 due to a stress migrationphenomenon, the test pattern 71 is accordingly increased in resistancevalue. Therefore, by measuring the resistance value of the test pattern71, it is possible to detect a disconnection of the second-layeraluminium alloy wiring 56 in the vicinity of plugs.

FIG. 14 shows the case in which the void 61 is generated in the top of asecond-layer aluminium alloy wiring 56. In the arrangement of testpattern 71 of the seventh embodiment, however, the disconnection can bedetected even though such a void is generated in the bottom of asecond-layer aluminium alloy wiring 56.

FIG. 15 is a graph illustrating the dependency of stress migrationfailure upon the wiring area in the semiconductor device according tothe seventh embodiment in FIG. 14. Semiconductor devices each having thestructure in FIG. 14, were stored at 250° C. for 1,000 hours and theincrease rates of the resistance values of their test patterns 71 weremeasured. The rate of failure was obtained on the basis thatsemiconductor devices of which increase rate was not less than 20%, werejudged as failure. As a parameter, the area of each second-layeraluminium alloy wiring 56 was changed in the range from 1 μm² to 100μm². In FIG. 15, ordinate axis represents rate of failure (%) afterstorage for 1,000 hours while abscissa axis represents the area (μm²) ofeach second-layer aluminium alloy wiring 56, i.e., each wiring incontact at its top and underside with plugs. Each wiring thickness was0.6 μm.

As shown in FIG. 15, semiconductor devices became defective when thearea of each second-layer aluminium alloy wiring 56 in contact at itstop and underside with plugs, was not less than 20 μm². A void generatedin a wiring grows when crystal vacancies have been collected. When thewiring volume is small, no void is increased in size of not less than0.5 μm which will result in a failure, even though all crystal vacanciesin a wiring are collected. As understood from FIG. 15, when the area ofa 0.6 μm-thick wiring is not less than 20 μm², i.e., when the wiringvolume is not less than 12 μm³, it is possible to detect, with highsensitivity, an increase in resistance of the wiring due to a voidgenerated and growing in a wiring portion held by and between upper andlower plugs.

Embodiment 8

FIG. 16 is a section view of a semiconductor device according to aneighth embodiment of the present invention. In FIG. 16, like parts aredesignated by like reference numerals used in FIG. 14. In FIG. 16,second-layer aluminium alloy wirings 56A as wirings and third-layeraluminium alloy wirings 59A as upper-layer wirings are respectivelydifferent in sizes from the second- and third-layer aluminium alloywirings 56, 59 in FIG. 1.

As shown in FIG. 16, the semiconductor device of the eighth embodimentis arranged such that a plurality of first-layer aluminium alloy wirings53 and a plurality of second-layer aluminium alloy wirings 56A areinsulated by a silicon oxide layer 54, and are electrically connected inseries to each other through W plugs 55, and that a test pattern 72 formeasuring a via resistance for reliability evaluation, is formed bythese serially connected first-layer aluminium alloy wirings 53 andsecond-layer aluminium alloy wirings 56A, the W plugs 55, the W plugs 58connected to the tops of the second-layer aluminium alloy wirings 56A,and the third-layer aluminium alloy wirings 59A. Even though in contactwith the second-layer aluminium alloy wirings 56A, the W plugs 58 serveas false plugs in which no electric current flows when a voltage isapplied to the test pattern 72. The W plugs 58 terminate at theelectrically isolated third-layer aluminium alloy wirings 59A.

The resistance value of the test pattern 72 is a sum of the resistancevalues of the first- and second-layer aluminium alloy wirings 53, 56Aand the resistance values of the W plugs 55. When it is now supposedthat the sheet resistance of each of the aluminium alloy wirings 53,56A, is equal to 100 mΩ/□, that the resistance value of each of the Wplugs 55 is equal to 1Ω, and that the number of the W plugs 55 is 1,000,the resistance value of the test pattern 72 in a normal mode is equal to1,500 Ω.

According to the eighth embodiment, the second-layer aluminium alloywirings 56A have, on the tops thereof, the electrically isolated W plugs58 and the third-layer aluminium alloy wirings 59A, and the test pattern72 employs a stacked via structure. Thus, the second-layer aluminiumalloy wirings 56A receive stress from the upper and lower W plugs 55,58. When a void 61 grows in a second-layer aluminium alloy wiring 56Adue to a stress migration phenomenon, the test pattern 72 is accordinglyincreased in resistance value. Therefore, by measuring the resistancevalue of the test pattern 72, it is possible to detect a disconnectionof an aluminium alloy wiring 56A in the vicinity of plugs. According tothe eighth embodiment, the number of the W plugs in the test pattern 72is reduced to a half as compared with the seventh embodiment. Thisreduces the resistance value in the test pattern 72 in a normal mode,thus further enhancing the detection sensitivity.

Embodiment 9

FIG. 17 is a section view of a semiconductor device according to a ninthembodiment of the present invention. In FIG. 17, like parts aredesignated by like reference numerals used in FIG. 14. In FIG. 17,first-layer aluminium alloy wirings 53B as lower-layer wirings,second-layer aluminium alloy wirings 56B as wirings and third-layeraluminium alloy wirings 59B as upper-layer wirings are respectivelydifferent in sizes from the first-, second- and third-layer aluminiumalloy wirings 53, 56, 59 in FIG. 14.

As shown in FIG. 17, the semiconductor device of the ninth embodiment isarranged such that a plurality of second-layer aluminium alloy wirings56B and a plurality of third-layer aluminium alloy wirings 59B areinsulated from each other by a silicon oxide layer 57, and areelectrically connected in series to each other through W plugs 58, andthat a test pattern 73 for measuring a via resistance for reliabilityevaluation, is formed by these serially connected second-layer aluminiumalloy wirings 56B and third-layer aluminium alloy wirings 59B, the Wplugs 58, the W plugs 55 connected to the undersides of the second-layeraluminium alloy wirings 56B, and the first-layer aluminium alloy wirings53B. Even though in contact with the second-layer aluminium alloywirings 56B, the W plugs 55 serve as false plugs in which no electriccurrent flows when a voltage is applied to the test pattern 73. The Wplugs 55 terminate at the electrically isolated first-layer aluminiumalloy wirings 53B.

The resistance value of the test pattern 73 is a sum of the resistancevalues of the second- and third-layer aluminium alloy wirings 56B, 59Band the resistance values of the W plugs 58. When it is now supposedthat the sheet resistance of each of the aluminium alloy wirings 56B,59B, is equal to 100 mΩ/□, that the resistance value of each of the Wplugs 58 is equal to 1Ω, and that the number of the W plugs 58 is 1,000,the resistance value of the test pattern 73 in a normal mode is equal to1,500 Ω.

According to the ninth embodiment, the second-layer aluminium alloywirings 56B have, at the undersides thereof, the electrically isolated Wplugs 55 and the first-layer aluminium alloy wirings 53B, and the testpattern 73 employs a stacked via structure. Thus, the second-layeraluminium alloy wirings 56B receive stress from the upper and lower Wplugs 55, 58. When a void 61 grows in a second-layer aluminium alloywiring 56B due to a stress migration phenomenon, the test pattern 73 isaccordingly increased in resistance value. Therefore, by measuring theresistance value of the test pattern 73, it is possible to detect adisconnection of the aluminium alloy wiring 56B in the vicinity ofplugs. According to the ninth embodiment, the number of seriallyconnected W plugs in the test pattern 73 is reduced to a half ascompared with the seventh embodiment. This reduces the resistance valueof the test pattern 73 in a normal mode, thus further enhancing thedetection sensitivity.

Embodiment 10

FIG. 18 is a section view of a semiconductor device according to a tenthembodiment of the present invention. In FIG. 18, like parts aredesignated by like reference numerals used in each of FIGS. 14, 16, 17.A second-layer aluminium alloy wiring 62 as a wiring has a width of 0.6μm and a length of 6 mm. Even though in contact with the second-layeraluminium alloy wiring 62, W plugs 55 serve as false plugs whichterminate at electrically isolated first-layer aluminium alloy wirings53B. Even though in contact with the second-layer aluminium alloy wiring62, W plugs 58 serve as false plugs which terminate at electricallyisolated third-layer aluminium alloy wirings 59A. Pairs of false plugs65 are farmed by the W plugs 55, 58 opposite to each other with respectto the second-layer aluminium alloy wiring 62.

As shown in FIG. 18, the semiconductor device of the tenth embodiment isarranged such that the second-layer aluminium alloy wiring 62 is incontact with the pairs of false plugs 65 and that a test pattern 74 formeasuring a via resistance for reliability evaluation, is formed by thesecond-layer aluminium alloy wiring 62, the pairs of false plugs 65, andthe first- and third-layer aluminium alloy wirings 53B, 59A at which theW plugs 55, 58 forming the pairs of false plugs 65 respectivelyterminate.

When it is now supposed that the sheet resistance of the aluminium alloywiring 62, is equal to 100 mΩ/□, the resistance value of the testpattern 74 in a normal mode is equal to 1,000 Ω.

According to the tenth embodiment, the test pattern 74 has a stacked viastructure. Thus, the second-layer aluminium alloy wiring 62 receivesstress from the upper and lower W plugs 55, 58. When a void 61 grows inthe second-layer aluminium alloy wiring 62 due to a stress migrationphenomenon, the test pattern 74 is accordingly increased in resistancevalue. Therefore, by measuring the resistance value of the test pattern74, it is possible to detect a disconnection of the aluminium alloywiring 62 in the vicinity of plugs. According to the tenth embodiment,the test pattern 74 does not have serially connected W plugs. Thisreduces the resistance value of the test pattern 74, thus increasing thesensitivity of detection of an increase in resistance due to adisconnection phenomenon.

FIG. 19 is a graph illustrating the dependency of stress migrationfailure upon the distance between adjacent pairs of false plugs insemiconductor devices according to the embodiment shown in FIG. 18.Likewise in the seventh embodiment, the semiconductor devices eachhaving the arrangement in FIG. 18 were stored at 250° C. for 1,000 hoursand the rates of increase in resistance value of the test patterns 74were measured. Then, the rate of failure was obtained on the basis thatsemiconductor devices of which increase rate were not less than 20%,were judged as failure. As a parameter, the distance L between adjacentpairs of false plugs 65 was changed from 1 μm to 100 μm. In FIG. 19,ordinate axis represents rate of failure (%) after storage for 1,000hours while abscissa axis represents the distance L (μm) betweenadjacent pairs of false plugs 65. Each wiring has a thickness of 0.6 μm.

As shown in FIG. 19, when the distance L between adjacent pairs of falseplugs 65 was not less than 10 μm, a failure occurred in semiconductordevices. A void generated in a wiring grows when crystal defects in thewiring are collected. When the wiring volume is small, no void isincreased in size of not less than 0.5 μm which will result in afailure, even though all crystal defects in the wiring are collected. Asunderstood from FIG. 19, when the distance L between adjacent pairs offalse plugs 65 is not less than 10 μm, it is possible to detect, withhigh sensitivity, an increase in resistance of a wiring due to the voidgenerated and growing in its portion held by and between a pair of falseplugs 65.

Modification of Embodiment 10

FIG. 20 is a plan view of a modification of the semiconductor deviceaccording to the tenth embodiment of the present invention, illustratingthat portion of a second-layer aluminium alloy wiring which is incontact with a pair of false plugs. In FIG. 20, a second-layer aluminiumalloy wiring 62A is in contact at its top and underside with a pair offalse plugs 65, respectively. In the second-layer aluminium alloy wiring62A, its portion in contact with the pair of false plugs 65 has a lengthof 1 μm and a wiring width of 0.4 μm, and other portion has a wiringwidth of 0.6 μm. The second-layer aluminium alloy wiring 62A has alength of 6 mm. Each of the pair of false plugs 65 has a diameter of 0.5μm.

When it is now supposed that the sheet resistance of the aluminium alloywiring 62A, is equal to 100 mΩ/□ and that the number of the pairs offalse plugs 65 is 1,000 pairs, the resistance value of the test pattern74 is equal to 1,008Ω. According to this modification, the test pattern74 has a stacked via structure. Thus, the second-layer aluminium alloywiring 62A receives stress from the upper and lower W plugs 55, 58. Whena void grows in the second-layer aluminium alloy wiring 62A due to astress migration phenomenon, the test pattern 74 is accordinglyincreased in resistance value. Therefore, by measuring the resistancevalue of the test pattern 74, it is possible to detect a disconnectionof the aluminium alloy wiring 62A in the vicinity of plugs.

In the structure of this modification, the wiring width of those top andunderside portions of the second-layer aluminium alloy wiring 62A whichare in contact with a pair of false plugs 65, is smaller than the plugdiameter. This securely increases the resistance value of a wiring whenthe wiring is disconnected due to stress. This enhances the sensitivityof detection of an increase in resistance due to a disconnectionphenomenon.

In each of the seventh to tenth embodiments, the description has beenmade of a semiconductor device having three wiring layers. However, thepresent invention may be arranged such that a semiconductor device hasfour or more wiring layers. When four or more wiring layers aredisposed, the wiring layer between upper and lower plugs opposite toeach other, may be disposed at other wiring layer than the highest andlowest wiring layers.

1. A method of producing a wiring structure of a semiconductor device,comprising: a step (a) of forming a first opening in a first insulatinglayer formed above a substrate and forming a lower plug in the firstopening; a step (b) of forming a wiring layer above the first insulatinglayer and the lower plug; a step (c) of forming a second insulatinglayer above the wiring layer, and forming, in the second insulatinglayer, a second opening opposite to the first opening, and forming anupper plug in the second opening; wherein by heat treatment at the step(b), in a case that there is a single grain in a first region of thewiring layer between the upper plug and the lower plug, a size of thegrain in the first region becomes substantially equal to a size of asingle grain or an average size of grains in a second region of thewiring layer not between the upper plug and the lower plug and, in casethat there are a number of grains in the first region, average size ofthe grains in the first region becomes substantially equal to the sizeof the single grain or the average size of the grains in the secondregion.
 2. The method according to claim 1 wherein the second region ofthe wiring layer is between the first insulating layer and the secondinsulating layer.
 3. The method according to claim 1, wherein the secondregion of the wiring layer is between a different upper plug from theupper plug and a different lower plug from the lower plug.
 4. The methodaccording to claim 1, wherein the wiring layer has a layer includingaluminium or aluminium alloy.
 5. The method according to claim 1,wherein at the step (b), the wiring layer is formed by sputtering, at adeposition temperature of about 200° C. or more.